Power Diodes, Schottky Diode, Gunn Diode, and IMPATT Diode
Curriculum and historical examination lineage for Power Diodes, Schottky Diode, Gunn Diode, and IMPATT Diode under Unit 2 (Power Devices and Fabrication) of Electronic System and PCB Design (21ECC101J) at SRMIST.
Historical appearance distribution across SRMIST Formative Tests (CT1, CT2) and University End Semester examinations.
Factual marks weightage of questions asked on this topic in historical examinations.
Question templates that recur across multiple examination cycles with similar conceptual stems.
“The negative resistance region of a Gunn diode is due to (A) Increase in effective mass of the...”
“The operating range of the IMPATT diode lies in the range of (A) $3 \text{ to } 100 \text{ GHz}$...”
“Which of the following is NOT a property of a Schottky diode? (A) Lower forward voltage drop (B)...”
“With suitable diagram discuss the I-V characteristics of IMPATT diode.”
“Which diode is known for its negative resistance characteristic and is used in microwave...”
Representative historical questions extracted directly from SRMIST examination papers.
With suitable diagram discuss the I-V characteristics of IMPATT diode.
Which diode is known for its negative resistance characteristic and is used in microwave applications? (A) Gunn Diode (B) Schottky Diode (C) Power Diode (D) Zener Diode
The negative resistance region of a Gunn diode is due to (A) Increase in effective mass of the electrons (B) Increase in mobility of the electrons (C) Decrease in effective mass...
The operating range of impatt diode line in the range of ________ GHz (A) 3 to 100 GHz (B) 3 to 200 GHz (C) 3 to 300 GHz (D) 3 to 400 GHz
With suitable diagram discuss the construction and working of an IMPATT diode. Discuss about its I-V characteristics. (b) With suitable diagram discuss the construction and...
Examinations where questions for Power Diodes, Schottky Diode, Gunn Diode, and IMPATT Diode have appeared.
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