Unit 2: Semiconductor Physics and Carrier Transport21PYB102J

P-N Junction and Biasing

Curriculum and historical examination lineage for P-N Junction and Biasing under Unit 2 (Semiconductor Physics and Carrier Transport) of Semiconductor Physics and Computational Methods (21PYB102J) at SRMIST.

Appearances
48
Cataloged Exam Questions
Exam Papers
22
Distinct University Exams
Question Families
5
Recurring Conceptual Archetypes
SRMIST Status
Active
Regulation 2021 Syllabus
Assessment Cycle Weightage

Historical appearance distribution across SRMIST Formative Tests (CT1, CT2) and University End Semester examinations.

CT1
1
Cycle Test 1
CT2
0
Cycle Test 2
EndSem
13
Semester Exam
Marks Weightage Distribution

Factual marks weightage of questions asked on this topic in historical examinations.

1 Marks:14 questions
3 Marks:18 questions
4 Marks:2 questions
8 Marks:8 questions
Recurring Question Families (5)

Question templates that recur across multiple examination cycles with similar conceptual stems.

family repeat6 paper appearances

“How does the capacitance of p-n junction diode vary in forward bias and reverse bias.”

family repeat4 paper appearances

“For a PN junction diode, the current in reverse bias may be (B) Several amperes (A) Few...”

family repeat4 paper appearances

“Write note on forward bias p-n junction.”

family repeat4 paper appearances

“Shortly discuss the band diagrams of dissimilar single layer p-n junction.”

family repeat3 paper appearances

“In the forward biasing of a p-n junction diode, the external voltage is applied: (A) Reduces the...”

Sample Past Exam Questions

Representative historical questions extracted directly from SRMIST examination papers.

For a PN junction diode, the current in reverse bias may be (B) Several amperes (A) Few milliamperes (C) Few micro amperes to (D) Few milliamperes to several amperes nanoamperes...

Year: 2023•Assessment: Other

For a PN junction diode, the current in reverse bias may be ________ (A) Few milliamperes (B) Several amperes (C) Few microamperes to several nanoamperes (D) Few milliamperes to...

Year: 2024•Assessment: EndSem
1 Marks

At room temperature, the voltage across the depletion layer for silicon is about ___ Volts. (A) 0.3 - 0.4 Volts (B) 0.6 - 0.7 Volts (C) 0.5 - 0.6 Volts (D) 0.2 - 0.3 Volts

Year: 2024•Assessment: EndSem
1 Marks

When a p-n junction diode is reverse biased? A) width of the depletion region reduces B) width of the depletion region increases C) depletion region disappears D) no change in...

Year: 2024•Assessment: EndSem
1 Marks

For a PN junction diode, the current in reverse bias may be ________ (A) Few milliamperes (B) Several amperes (C) Few micro amperes to (D) Few milliamperes to several nanoamperes...

Year: 2023•Assessment: EndSem
1 Marks
Historical Papers Indexed (8)

Examinations where questions for P-N Junction and Biasing have appeared.

Semiconductor Physics and Computational Methods - PYQ 2023 May
2023Other
Semiconductor Physics and Computational Methods - PYQ 2024 May
2024EndSem
Semiconductor Physics And Computational Methods - PYQ Jul 2024
2024EndSem
Semiconductor Physics And Computational Methods - PYQ Nov 2024
2024EndSem
Semiconductor Physics And Computational Methods - PYQ May 2023
2023EndSem
Semiconductor Physics And Computational Methods - PYQ May 2019
2019EndSem
Semiconductor Physics And Computational Methods - PYQ Nov 2018
2018EndSem
Semiconductor Physics And Computational Methods - PYQ Dec 2023
2023EndSem
Other Exam Topics in Unit 2: Semiconductor Physics and Carrier Transport

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